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Shenzhen Microz Electronic Technology Development Co.,Ltd

Company Profile

Selling Leads

Shenzhen Microz Electronic Technology Development Co.,Ltd
[China]

Address:
Room1503, C Building, Perfect Garden, Futian District , Shenzhen, Shenzhen Guangdong 518026 China

Phone:
86-755-83039803

Contact name:
Aaron Deng , SALES MANAGER

Shenzhen Microz Electronic Technology Development Co.,Ltd

Products

	Kingston Memory - DDRII 1GB

Click to enlarge image

Model Number

Kingston Memory - DDRII 1GB

Professional Manufacturer, warranty: 5 years

Sdram: 128M $4.98, 256M $8.80

Kingston-DDR400HMz 256M $ 9.00 512M $15.80 1G $ 24.00
Kinston-DDRII 667MHz 512M $12.90/each 1G $19.980/each
We can supplyDDRI& DDR II memory with good quality and prices.
Product Name: DDRI266/400/333& DDR II 533 / 667MHz 256MB 512MB 1GB
Number: DDR1&DDR2
Place of Origin: China
We can supply Sdram, DDRI and DDR II memory with good quality and prices cheaper if you order big quantity.
Warranty for 3-5 years.
Model DDRII 533/667 256MB. 512MB. 1G
Detailed Selling Lead Description
1) DDRI 400/333 & DDRII 533/667/800 MHz
2) 168/184/240-pin socket type dual in line memory module (DIMM)
3) 2.6V power supply
4) Data rate: 400/333/533/667/800Mbps (max. )
5) 2.5 V (SSTL-2 compatible) I/O for DDR I products, 1.8Vpower supply for DDR II products
6) Double-data-rate architecture, two data transfers per clock cycle
7) Bi-directional, differential data strobe (DQS) is transmitted/received with data,
To be used in capturing data at the receiver
8) Data inputs and outputs are synchronized with DQS
9) DQS is edge aligned with data for read, center aligned with data for write
10) Differential clock inputs (CK and CK)
11) DLL aligns DQ and DQS transitions with CK transitions
12) Commands entered on each positive CK edge: Data and data mask referenced to both
Edges of DQS
13) Four internal banks for concurrent operation (component)
14) Data mask(DM) for write data
15) Auto precharge option for each burst access
16) Programmable burst length: 2, 4, 8
17) Programmable/CAS latency (CL): 3
18) Programmable output driver strength: Normal/weak
19) Refresh cycles: (8192 refresh cycles/64ms)
20) 7.8US maximum average periodic refresh interval
21) Posted CAS by programmable additive latency for better command and data bus efficiency
22) Off-chip-driver impedance adjustment and on-die-termination for better signal
Quality
23) DQS can be disabled for single-ended data strobe operation
24) 2 variations of refresh Auto refresh, Self refresh
Packing: Retail/bulk packing